The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2011
Filed:
Dec. 08, 2006
Rae-man Park, Daejeon, KR;
Sang-hyeob Kim, Daejeon, KR;
Jonghyurk Park, Daegu, KR;
Sunglyul Maeng, Chungcheongbuk-do, KR;
Rae-Man Park, Daejeon, KR;
Sang-Hyeob Kim, Daejeon, KR;
Jonghyurk Park, Daegu, KR;
Sunglyul Maeng, Chungcheongbuk-do, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.