The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2011
Filed:
Aug. 21, 2009
Guan-hua Yeh, Miao-Li, TW;
Tsai-lai Cheng, Miao-Li, TW;
Hong-gi Wu, Miao-Li, TW;
Chimel Innolux Corporation, Miao-Li County, TW;
Abstract
An exemplary method for fabricating an LTPS-TFT substrate is as follows. In step S, a p-Si pattern including a source electrode contact region and a drain electrode contact region of a first type TFT, a source electrode contact region and a drain electrode contact region of a second type TFT is formed. In step S, the source electrode contact region and the drain electrode contact region of the first type TFT are heavily doped with a first dopant. In step S, gate electrodes of the first and the second type TFT are formed. In step S, the source electrode contact regions and drain electrode contact regions of the first and second type TFTs are heavily doped with a second dopant. The first dopant and the second dopant are compensative, and the number ratio of the first dopant to the second dopant is approximately 2 to 1.