The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2011
Filed:
Mar. 03, 2006
Futoshi Yamamoto, Tokyo, JP;
Katsutoshi Kondou, Tokyo, JP;
Junichiro Ichikawa, Tokyo, JP;
Masaru Nakamura, Tsukuba, JP;
Sunao Kurimura, Tokyo, JP;
Shunji Takekawa, Tokyo, JP;
Kenji Kitamura, Tokyo, JP;
Futoshi Yamamoto, Tokyo, JP;
Katsutoshi Kondou, Tokyo, JP;
Junichiro Ichikawa, Tokyo, JP;
Masaru Nakamura, Tsukuba, JP;
Sunao Kurimura, Tokyo, JP;
Shunji Takekawa, Tokyo, JP;
Kenji Kitamura, Tokyo, JP;
Sumitomo Osaka Cement Co., Ltd., Tokyo, JP;
National Institute for Materials Science, Tsukuba, Ibaraki, JP;
Abstract
An optical device and a method of manufacturing the optical device, with the method including the steps of forming a dopant layer on a stoichiometric lithium niobate single crystal substrate with Li to Nb mole composition ratio of 49.5% to 50.5%, and diffusing a dopant in the dopant layer into at least a portion of the stoichiometric lithium niobate single crystal substrate. The stoichiometric lithium niobate single crystal substrate includes 0.5 to 5 mol % of Mg. In the diffusing step, a heat treatment is performed at a diffusion temperature of 1000° C. to 1200° C. for a diffusion time of 3 hours to 24 hours in a dry atmosphere of at least one of O, N, Ar and He gas having a dew-point temperature of −35° C. or less.