The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7983013 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 19, 2011

Filed:

Nov. 29, 2007
Applicants:

Fengtai Huang, Northville, MI (US);

Bryan Ludwig, West Bloomfield, MI (US);

Fred Flett, Bloomfield, MI (US);

Subramanian S. Vadula, Novi, MI (US);

Lizhi Zhu, Canton, MI (US);

Richard J. Hampo, Plymouth, MI (US);

Inventors:

Fengtai Huang, Northville, MI (US);

Bryan Ludwig, West Bloomfield, MI (US);

Fred Flett, Bloomfield, MI (US);

Subramanian S. Vadula, Novi, MI (US);

Lizhi Zhu, Canton, MI (US);

Richard J. Hampo, Plymouth, MI (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 3/08 (2006.01); H02H 9/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A circuit and method to provide dynamic fault protection to transistors are disclosed. The fault protection may be particularly suited for protecting insulated gate bipolar transistors (IGBTs).


Find Patent Forward Citations

Huang, Fengtai. (2011). Operating and controlling insulated gate bipolar transistors in high speed failure mode situations (U.S. Patent No. 7983013). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7983013

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