The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Oct. 12, 2010
Kiyohiro Kawasaki, Osaka, JP;
Kiyohiro Kawasaki, Osaka, JP;
A U Optronics Corp., Hsinchu, TW;
Abstract
In a conventional manufacturing process where the number of manufacturing processes is reduced to form a semiconductor layer of a channel etch-type insulating gate-type transistor and source-drain wires in one photographic etching processing using half-tone exposure technology, the manufacturing margin is narrow, lowering the yield if the distance between the source and the drain wire shortens. A 4-mask process proposal needless of half-tone exposure technology is constructed by streamlining the formation of scan lines and pseudo-pixel electrodes at the same time, both comprising a laminate of a transparent conductive layer and a metal layer, and the formation of the transparent conductive pixel electrodes through removing the metal layers on the pseudo-pixel electrodes at the time of the formation of the opening in the passivation insulating layer, as well as by reducing the formation process of the opening through removing a gate insulating layer also at the formation of semiconductor layers for channel-etch type insulating gate transistors.