The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Jun. 14, 2007
Applicants:
Marc Sworowski, Caen, FR;
David D. R. Chevrie, Bretteville sur Odon, FR;
Pascal Philippe, Caen, FR;
Inventors:
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/46 (2006.01); H03H 9/50 (2006.01); H03H 3/007 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
Method of manufacturing a MEMS device integrated in a silicon substrate. In parallel to the manufacturing of the MEMS device passive components as trench capacitors with a high capacitance density can be processed. The method is especially suited for MEMS resonators with resonance frequencies in the range of 10 MHz.