The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2011

Filed:

May. 14, 2007
Applicant:

Ashay Chitnis, Goleta, CA (US);

Inventor:

Ashay Chitnis, Goleta, CA (US);

Assignee:

Cree, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H 9/125 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating a bulk acoustic wave (BAW) device comprising providing a growth substrate and growing an Group-III nitride epitaxial layer on the growth substrate. A first electrode is deposited on the epitaxial layer. A carrier substrate is provided and the growth substrate, epitaxial layer and first electrode combination is flip-chip mounted on the carrier substrate. The growth substrate is removed and a second electrode is deposited on the epitaxial layer with the epitaxial layer sandwiched between the first and second electrodes. A bulk acoustic wave (BAW) device comprises first and second metal electrodes and a Group-III nitride epitaxial layer sandwiched between the first and second electrodes. A carrier substrate is included, with the first and second electrodes and epitaxial layer on the carrier substrate.


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