The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Mar. 17, 2009
Katsunori Mitsuhashi, Yokohama, JP;
Tetsuya Ide, Yokohama, JP;
Katsunori Mitsuhashi, Yokohama, JP;
Tetsuya Ide, Yokohama, JP;
Advanced LCD Technologies Development Center Co., Ltd., Kawasaki-shi, JP;
Abstract
A thin-film semiconductor device including a transparent insulating substrate, an island semiconductor layer formed on the transparent insulating substrate and including a source region containing a first-conductivity-type impurity and a drain region containing a first-conductivity-type impurity and spaced apart from the source region, a gate insulating film and a gate electrode which are formed on a portion of the island semiconductor layer, which is located between the source region and the drain region, a sidewall spacer having a 3-ply structure including a first oxide film, a nitride film and a second oxide film, which are respectively formed on a sidewall of the gate electrode, and an interlayer insulating film covering the island semiconductor layer and the gate electrode.