The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Mar. 13, 2007
Jean-philippe Bourgoin, Voisins le Bretonneux, FR;
Vincent Derycke, Montigny le Bretonneux, FR;
Julien Borghetti, Cachan, FR;
Jean-Philippe Bourgoin, Voisins le Bretonneux, FR;
Vincent Derycke, Montigny le Bretonneux, FR;
Julien Borghetti, Cachan, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
The invention concerns a device for detecting and storing electromagnetic beams, an imager incorporating same, a method for making said device and use thereof. The inventive device comprises a field-effect phototransistor including: two source and drain contact electrodes, an electrical conduction unit which is connected to the two contact electrodes and which is coated with a photosensitive polymeric coating capable of absorbing the beams, of detecting, of generating in response the loads detected by said unit and of storing said loads, and a gate electrode which is capable of controlling the electric current in the unit as well as spatially distributing the loads in said coating and which is separated from said unit by a gate dielectric. Said device is configured such that the conduction unit comprises at least one semiconductive nanotube or nanowire capable of supplying an electric signal representing a modification of the conductivity of the phototransistor having been exposed to a beam, and that the gate dielectric has a thickness and a permittivity ∈, which satisfy ∈>0.2 nm*1, so that the conductivity after exposition may be electrically reset in a reduced time and that the device forms at least one imaging pixel.