The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Jun. 17, 2009
Byung-kyu Cho, Seoul, KR;
Hee-soo Kang, Seoul, KR;
Dong-uk Choi, Gyeonggi-do, KR;
Choong-ho Lee, Gyeonggi-do, KR;
Byung-kyu Cho, Seoul, KR;
Hee-soo Kang, Seoul, KR;
Dong-uk Choi, Gyeonggi-do, KR;
Choong-ho Lee, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are a selection transistor and a method of fabricating the same. A selection transistor can be formed on an active region in a semiconductor substrate to include a gate electrode that includes recessed portions of a sidewall of the gate electrode which are recessed inward adjacent lower portions of the gate electrode to define a T-shaped cross section of the gate electrode. A tunnel insulating layer can be located between the gate electrode and the active region.