The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Nov. 30, 2007
Applicant:
Tae-woo Jung, Ichon-shi, KR;
Inventor:
Tae-Woo Jung, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Ichon-shi, Kyoungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a trench includes providing a substrate, and forming the trench in the substrate using a gas containing chlorine (Cl) gas as a main etch gas and SiFgas as an additive gas, wherein a sidewall of the trench has a substantially vertical profile by virtue of reaction of the Clgas and the SiFgas.
Jung, Tae-Woo. (2011). Method for forming trench and method for fabricating semiconductor device using the same (U.S. Patent No. 7981806). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7981806
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile