The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Jan. 07, 2010
Teruhiko Kumada, Chiyoda-ku, JP;
Hideharu Nobutoki, Chiyoda-ku, JP;
Naoki Yasuda, Chiyoda-ku, JP;
Kinya Goto, Chiyoda-ku, JP;
Masazumi Matsuura, Chiyoda-ku, JP;
Teruhiko Kumada, Chiyoda-ku, JP;
Hideharu Nobutoki, Chiyoda-ku, JP;
Naoki Yasuda, Chiyoda-ku, JP;
Kinya Goto, Chiyoda-ku, JP;
Masazumi Matsuura, Chiyoda-ku, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.