The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Aug. 17, 2009
Applicants:
Takayuki Izumi, Tokyo, JP;
Ryoji Shigemasa, Tokyo, JP;
Tomoyuki Ohshima, Tokyo, JP;
Inventors:
Assignee:
OKI Semiconductor Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device manufacturing method includes: providing a laminated member in which at least a first GaAs layer, an InAlGaAs layer and a second GaAs layer are laminated on or above a substrate in this order; and etching the second GaAs layer using the InAlGaAs layer as an etching stopper layer. A ratio of In:Al of the InAlGaAs layer is in a range of approximately 4:6 to approximately 6:4 and a ratio of (In+Al):Ga of the InAlGaAs layer is in a range of approximately 1.5:8.5 to approximately 5:5.