The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Jan. 20, 2004
Tobias Roschek, Buchs, CH;
Bernd Rech, Aachen, DE;
Tobias Roschek, Buchs, CH;
Bernd Rech, Aachen, DE;
Forschungszentrum Julich GmbH, Julich, DE;
Abstract
The inventive method for depositing silicon onto a substrate firstly involves the introduction of a reactive silicon-containing gas and hydrogen into the plasma chamber and then the initiation of the plasma. After initiating the plasma, only reactive silicon-containing gas or a gas mixture containing hydrogen is supplied to the plasma chamber in an alternatively continuous manner, and the gas mixture located inside the chamber is, at least in part, simultaneously withdrawn from the chamber. From the start, homogeneous microcrystalline silicon is deposited onto the substrate in the presence of hydrogen.