The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Aug. 13, 2007
Hiroaki Katou, Kawasaki, JP;
Hiroaki Katou, Kawasaki, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
To provide a manufacturing method of a semiconductor substrate and a manufacturing method of a semiconductor device, which prevent reduction in breakdown voltage of a gate oxide film of a device formed in a semiconductor substrate to improve a reliability of the gate oxide film. A manufacturing method of a semiconductor substrate according to the present invention includes: exposing a silicon surface of an active layer substratemade of single-crystal silicon, to which a semiconductor device is formed; forming an oxide film on a support substratemade of single-crystal silicon; and bonding the silicon surface of the active layer substrateto the oxide film formed on the support substrate. The silicon surface of the active layer substrateis exposed by removing a spontaneous oxidation filmformed on the surface.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile