The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Apr. 28, 2006
Geoffrey Alan Scarsbrook, Ascot, GB;
Daniel James Twitchen, Ascot, GB;
Christopher John Howard Wort, Wantage, GB;
Michael Schwitters, Oslo, NO;
Erhard Kohn, Ulm, DE;
Geoffrey Alan Scarsbrook, Ascot, GB;
Daniel James Twitchen, Ascot, GB;
Christopher John Howard Wort, Wantage, GB;
Michael Schwitters, Oslo, NO;
Erhard Kohn, Ulm, DE;
Diamond Microwave Devices Limited, Leeds, GB;
Abstract
A method of manufacturing a transistor, typically a MESFET, includes providing a substrate including single crystal diamond material having a growth surface on which further layers of diamond material can be deposited. The substrate is preferably formed by a CVD process and has high purity. The growth surface has a root-mean-square roughness of 3 nm or less, or is free of steps or protrusions larger than 3 nm. Further diamond layers are deposited on the growth surface to define the active regions of the transistor. An optional n+ shielding layer can be formed in or on the substrate, following which an additional layer of high purity diamond is deposited. A layer of intrinsic diamond may be formed directly on the upper surface of the high purity layer, followed by a boron doped ('delta doped') layer. A trench is formed in the delta doped layer to define a gate region.