The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2011

Filed:

Mar. 28, 2008
Applicants:

Eiichi Satoh, Osaka, JP;

Shogo Nasu, Hyogo, JP;

Reiko Taniguchi, Osaka, JP;

Masayuki Ono, Osaka, JP;

Masaru Odagiri, Hyogo, JP;

Inventors:

Eiichi Satoh, Osaka, JP;

Shogo Nasu, Hyogo, JP;

Reiko Taniguchi, Osaka, JP;

Masayuki Ono, Osaka, JP;

Masaru Odagiri, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A light emitting device of the invention includes an electron transporting layer, a hole transporting layer provided mutually facing the electron transporting layer with a distance between the hole transporting layer and the electron transporting layer, a phosphor layer having a layer of a plurality of semiconductor fine particles sandwiched between the electron transporting layer and the hole transporting layer, a first electrode provided facing the electron transporting layer and connected electrically, and a second electrode provided facing the hole transporting layer and connected electrically: in which the semiconductor fine particles composing the phosphor layer have a p-type part and an n-type part inside of the particles and have a pn-junction in the interface of the p-type part and the n-type part and are arranged in a manner that the p type part is partially brought into contact with the hole transporting layer and at the same time, the n type part is partially brought into contact with the electron transporting layer.


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