The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Oct. 08, 2007
Shinji Abe, Tokyo, JP;
Kazushige Kawasaki, Tokyo, JP;
Shinji Abe, Tokyo, JP;
Kazushige Kawasaki, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
After a metal cap layer is laminated on a semiconductor laminated structure, a waveguide ridge is formed, the waveguide ridge is coated with an SiOfilm, and a resist is applied; then, a resist pattern is formed, the resist pattern exposing the surface of the SiOfilm on the top of the waveguide ridge, and burying the SiOfilm in channels with a resist film having a surface higher than the surface of the metal cap layer of the waveguide ridge and lower than the surface of the SiOfilm of the waveguide ridge; the SiOfilm is removed by dry etching, using the resist pattern as a mask. The metal cap layer is removed by wet etching, and a p-GaN layer of the waveguide ridge is exposed to form the electrode layer.