The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Jan. 07, 2005
Mutsuko Hatano, Kokubunji, JP;
Shinya Yamaguchi, Mitaka, JP;
Mikio Hongo, Yokohama, JP;
Akio Yazaki, Fuchu, JP;
Takeshi Noda, Mobara, JP;
Mutsuko Hatano, Kokubunji, JP;
Shinya Yamaguchi, Mitaka, JP;
Mikio Hongo, Yokohama, JP;
Akio Yazaki, Fuchu, JP;
Takeshi Noda, Mobara, JP;
Hitachi Displays, Ltd., Chiba, JP;
Abstract
A method of forming a semiconductor thin film includes a highly sensitive inspection method for detecting lateral crystals and a crystallizing method. In the crystallizing method, the time-based pulse width of a laser SXL is modulated and an approximate band-like crystal silicon film SPSI is formed in a desired region while scanning the substrate SUBbidirectionally in the X and −X directions. In the inspection method, an inspection beam PROis irradiated to the substrate just after the laser SXL is turned off. A protrusion TOKI will be formed on the silicon film portion where the laser SXL is turned off if the state of the silicon film is that of a lateral crystal SPSI. The inspection beam PROis scattered by the protrusion TOKI and observed by a detector. If the state of the silicon film is granular crystal GGSI or aggregated film AGSI, such a protrusion TOKI is not observed.