The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
May. 05, 2009
Seiichi Tamura, Yokohama, JP;
Hiroshi Yuzurihara, Atsugi, JP;
Shigeru Nishimura, Ebina, JP;
Ryuichi Mishima, Machida, JP;
Yasushi Nakata, Yokohama, JP;
Seiichi Tamura, Yokohama, JP;
Hiroshi Yuzurihara, Atsugi, JP;
Shigeru Nishimura, Ebina, JP;
Ryuichi Mishima, Machida, JP;
Yasushi Nakata, Yokohama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A manufacturing method is provided for a photoelectric conversion device in which no plane channeling is produced. The photoelectric conversion device includes a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate that forms an off-angle θ with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming a semiconductor region constituting the photoelectric conversion element forms an angle θ to a direction perpendicular to the principal plane within a range of 0°<φ≦45°, and further a direction of a projection of the ion injecting direction to the principal plane forms each angle α with the two plane direction within a range of 0°<α<90°.