The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Dec. 17, 2008
Horng-chih Lin, Hsinchu, TW;
Chun-jung Su, Gueiren Township, Tainan County, TW;
Hsing-hui Hsu, Taipei, TW;
Guan-jang LI, Puzih, TW;
Horng-Chih Lin, Hsinchu, TW;
Chun-Jung Su, Gueiren Township, Tainan County, TW;
Hsing-Hui Hsu, Taipei, TW;
Guan-Jang Li, Puzih, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
The present invention discloses a suspended nanochannel transistor structure and a method for fabricating the same. The transistor structure of the present invention comprises a substrate; a side gate formed on the substrate; a dielectric layer covering the substrate and the side gate; a suspended nanochannel formed beside the lateral of the side gate with an air gap existing between the suspended nanochannel and the dielectric layer; a source and a drain formed over the dielectric layer and respectively arranged at two ends of the suspended nanochannel. The electrostatic force of the side gate attracts or repels the suspended nanochannel and thus fast varies the equivalent thickness of the side-gate dielectric layer. Thereby, the on/off state of the element is rapidly switched, or the initial voltage of the channel is altered.