The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Feb. 05, 2008
Kojiro Nagaoka, Kanagawa, JP;
Yoshihiko Nagahama, Kanagawa, JP;
Kojiro Nagaoka, Kanagawa, JP;
Yoshihiko Nagahama, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
Disclosed herein is an insulated gate field effect transistor including: (A) a source/drain region and a channel formation region; (B) a gate electrode formed above the channel formation region; and (C) a gate insulating film; wherein the gate insulating film is composed of a gate insulating film main body portion formed between the gate electrode and the channel formation region, and a gate insulating film extension portion extending from the insulating film main body portion to a middle of a side surface portion of the gate electrode, and when a height of the gate electrode is Hand a height of the gate insulating film extension portion is Hwith a surface of the channel formation region as a reference, a relationship of H<His fulfilled.