The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7977738 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 12, 2011

Filed:

Jul. 02, 2009
Applicants:

Yoshihiro Minami, Yokosuka, JP;

Takashi Ohsawa, Yokohama, JP;

Tomoaki Shino, Kawasaki, JP;

Takeshi Hamamoto, Yokohama, JP;

Akihiro Nitayama, Yokohama, JP;

Inventors:

Yoshihiro Minami, Yokosuka, JP;

Takashi Ohsawa, Yokohama, JP;

Tomoaki Shino, Kawasaki, JP;

Takeshi Hamamoto, Yokohama, JP;

Akihiro Nitayama, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor memory device includes bodies electrically floating; sources; drains; gate electrodes, each of which is adjacent to one side surface of the one of the bodies via a gate dielectric film; plates, each of which is adjacent to the other side surface of the one of the bodies via a plate dielectric film; first bit lines on the drains, the first bit lines including a semiconductor with a same conductivity type as that of the drains; and emitters on the semiconductor of the first bit lines, the emitters including a semiconductor with an opposite conductivity type to that of the semiconductor of the first bit lines, wherein the emitters are stacked above the bodies and the drains.


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