The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7977729 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 12, 2011

Filed:

Jul. 15, 2008
Applicants:

Hiroshi Watanabe, Yokohama, JP;

Atsuhiro Kinoshita, Kamakura, JP;

Shigeki Kobayashi, Tokyo, JP;

Daisuke Hagishima, Tokyo, JP;

Inventors:

Hiroshi Watanabe, Yokohama, JP;

Atsuhiro Kinoshita, Kamakura, JP;

Shigeki Kobayashi, Tokyo, JP;

Daisuke Hagishima, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

An aging device according to an embodiment of the present invention includes a semiconductor substrate, first and second diffusion layers provided in a first element region, a floating gate provided above a channel region between the first and second diffusion layers, and a control gate electrode provided beside the floating gate with an interval in the lateral direction. A coupling capacitance between the floating gate and the control gate electrode is larger than a coupling capacitance between the floating gate and the semiconductor substrate.


Find Patent Forward Citations

Loading…