The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Apr. 30, 2008
Edward B. Harris, Fogelsville, PA (US);
Edward B. Harris, Fogelsville, PA (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
A method for increasing a voltage tolerance of a MOS device having a first capacitance value associated therewith is provided. The method includes the steps of: connecting at least a first capacitor in series with the MOS device, the first capacitor having a first capacitance value associated therewith, the first capacitor having a first terminal coupled to a gate of the MOS device and a second terminal adapted to receive a first signal; and adjusting a ratio of the first capacitance value and a second capacitance value associated with the MOS device such that a second signal present at the gate of the MOS device will be an attenuated version of the first signal. An amount of attenuation of the first signal is a function of the ratio of the first and second capacitance values.