The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Jul. 02, 2010
Shinichi Fukada, Hamura, JP;
Shinichi Fukada, Hamura, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
To securely prevent hydrogen from entering a ferroelectric layer of a ferroelectric memory. A first hydrogen barrier layeris formed on the lower side of ferroelectric capacitors. Upper surfaces and side surfaces of the ferroelectric capacitorsare covered by a second hydrogen barrier layer. All upper electrodesof the plural ferroelectric capacitorsto be connected to a common plate line P are connected to one another by an upper wiring layer. The upper wiring layeris connected to the plate line P through a lower wiringprovided below the ferroelectric capacitors. A third hydrogen barrier layeris formed on the upper wiring layersuch that all edge sectionsof the third hydrogen barrier layercome in contact with the first hydrogen barrier layer