The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Aug. 04, 2004
Noboru Ichinose, Tokyo, JP;
Kiyoshi Shimamura, Tokyo, JP;
Kazuo Aoki, Tokyo, JP;
Encarnacion Antonia Garcia Villora, Tokyo, JP;
Noboru Ichinose, Tokyo, JP;
Kiyoshi Shimamura, Tokyo, JP;
Kazuo Aoki, Tokyo, JP;
Encarnacion Antonia Garcia Villora, Tokyo, JP;
Koha Co., Ltd., Tokyo, JP;
Abstract
To provide a semiconductor layer in which a GaN system epitaxial layer having high crystal quality can be obtained. The semiconductor layer includes a β-GaOsubstratemade of a β-GaOsingle crystal, a GaN layerformed by subjecting a surface of the β-GaOsubstrateto nitriding processing, and a GaN growth layerformed on the GaN layerthrough epitaxial growth by utilizing an MOCVD method. Since lattice constants of the GaN layerand the GaN growth layermatch each other, and the GaN growth layergrows so as to succeed to high crystalline of the GaN layer, the GaN growth layerhaving high crystalline is obtained.