The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Mar. 27, 2009
Weon-hong Kim, Suwon-si, KR;
Min-woo Song, Seongnam-si, KR;
Pan-kwi Park, Suwon-si, KR;
Jung-min Park, Ansan-si, KR;
Weon-Hong Kim, Suwon-si, KR;
Min-Woo Song, Seongnam-si, KR;
Pan-Kwi Park, Suwon-si, KR;
Jung-Min Park, Ansan-si, KR;
Abstract
In a semiconductor device and a method of manufacturing a semiconductor device, a lower electrode is formed on a semiconductor substrate. A first zirconium oxide layer is formed on the lower electrode by performing a first deposition process using a first zirconium source and a first oxidizing gas. A zirconium carbo-oxynitride layer is formed on the first zirconium oxide layer by performing a second deposition process using a second zirconium source, a second oxidizing gas and a nitriding gas, and an upper electrode is formed on the zirconium carbo-oxynitride layer. A zirconium oxide-based composite layer having a high dielectric constant and a thin equivalent oxide thickness can be obtained.