The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Sep. 16, 2010
Evelyn Scheer, Stockstadt, DE;
Oliver Graw, Alzenau, DE;
Roland Weber, Kahl am Main, DE;
Udo Schreiber, Jossgrund, DE;
Evelyn Scheer, Stockstadt, DE;
Oliver Graw, Alzenau, DE;
Roland Weber, Kahl am Main, DE;
Udo Schreiber, Jossgrund, DE;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for forming a thin-film transistor gate insulating layer over a substrate disposed in a processing chamber is provided. The method includes: introducing a processing gas for producing a plasma in the processing chamber; heating the substrate to a substrate processing temperature of between 50 and 350° C.; and depositing silicon oxide, silicon oxynitride, or silicon nitride over the heated substrate by sputtering a target assembly at a medium frequency.