The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Aug. 19, 2005
Osamu Nakamura, Atsugi, JP;
Hiroko Yamamoto, Hadano, JP;
Junko Sato, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsgui-shi, Kanagawa-ken, JP;
Abstract
A method for forming a semiconductor layer having a fine shape is provided. A method for manufacturing a semiconductor device with few variations is provided. In addition, a method for manufacturing a semiconductor device with a high yield is provided where the cost can be reduced with few materials. According to the invention, a semiconductor film is partially irradiated with a laser beam to form an insulating layer, and the semiconductor film is etched using the insulating film as a mask so as to form a semiconductor layer having a desired shape. Then, the semiconductor layer is used to manufacture a semiconductor device. According to the invention, a semiconductor layer having a fine shape can be formed in a predetermined position without using a known photolithography step using a resist.