The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
May. 19, 2010
Hiroshi Tada, Kanagawa, JP;
Naoki Koito, Kanagawa, JP;
Hiroshi Tada, Kanagawa, JP;
Naoki Koito, Kanagawa, JP;
Fujifilm Corporation, Tokyo, JP;
Abstract
There is provided a method of manufacturing a top contact field-effect transistor including forming a protection layer on an active layer formed in a semiconductor layer forming process, forming a photoresist film on the protection layer and pattern exposing the same in an exposure process, and developing the photoresist film passing through the exposure process using an alkaline developing liquid to form a resist pattern and removing a region exposed by the resist pattern from the protection layer to etch the protection layer in a subsequent development process; a field-effect transistor, and a method of manufacturing a display device.