The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Mar. 31, 2010
Andy E. Hooper, Portland, OR (US);
David Barsic, Portland, OR (US);
Clint R. Vandergiessen, Beaverton, OR (US);
Haibin Zhang, Portland, OR (US);
James N. O'brien, Bend, OR (US);
Andy E. Hooper, Portland, OR (US);
David Barsic, Portland, OR (US);
Clint R. Vandergiessen, Beaverton, OR (US);
Haibin Zhang, Portland, OR (US);
James N. O'Brien, Bend, OR (US);
Electro Scientific Industries, Inc., Portland, OR (US);
Abstract
A solution to failure mechanisms caused by mechanical sawing of a mechanical semiconductor workpiece entails use of a laser beam to cut and remove the electrically conductive and low-k dielectric material layers from a dicing street before saw dicing to separate semiconductor devices. A laser beam forms a laser scribe region such as a channel in the electrically conductive and low-k dielectric material layers, the bottom of the channel ending on a laser energy transparent stop layer of silicon oxide lying below all of the electrically conductive and low-k dielectric material layers. The disclosed process entails selection of laser parameters such as wavelength, pulse width, and fluence that cooperate to leave the silicon oxide layer stop layer completely or nearly undamaged. A mechanical saw cuts the silicon oxide layer and all other material layers below it, as well as the substrate, to separate the semiconductor devices.