The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Mar. 06, 2008
Bernard Previtali, Grenoble, FR;
Bernard Previtali, Grenoble, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
A method for manufacturing at least one structure for a double grid field effect transistor, including: forming, on an isolating face of a first substrate, a stack comprising successively at least one layer of rear grid material, a layer of rear grid isolator, one semi-conducting zone for each structure to be manufactured, an electrically insulating layer of a front grid, at least one layer of front grid material and a masking element for each structure to be manufactured, placed facing the semi-conducting zone; forming in the at least one layer of front grid material a pattern reproducing a shape of the masking element and comprising etching of the layer of front grid material to eliminate the front grid material outside the pattern; and forming on free faces of the pattern a sacrificial spacer covering a first part of the semi-conducting zone.