The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Oct. 23, 2009
Karl Hofmann, Munich, DE;
Luis-felipe Giles, Munich, DE;
Karl Hofmann, Munich, DE;
Luis-Felipe Giles, Munich, DE;
Infineon Technologies AG, , DE;
Abstract
A method of producing a field effect transistor arrangement. A substrate having a first crystal surface orientation is provided. A first layer is formed above a first portion of the substrate, the first layer having a second crystal surface orientation different from the first crystal surface orientation. A second layer is formed on at least a second portion of the substrate and adjacent to the first layer, the second layer having the first crystal surface orientation. A first buried oxide layer is formed between the substrate and the first layer. Micro-cavities are formed in the second layer and oxidizing the micro-cavities, thereby forming a second buried oxide layer between the substrate and the second layer. A first field effect transistor of a first conductivity type is formed in or on the first layer. A second field effect transistor of a second conductivity type is formed in or on the second layer.