The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Jan. 10, 2009
Farrokh Ayazi, Atlanta, GA (US);
Mina Raieszadeh, Ann Arbor, MI (US);
Pezhman Monadgemi, Fremont, CA (US);
Farrokh Ayazi, Atlanta, GA (US);
Mina Raieszadeh, Ann Arbor, MI (US);
Pezhman Monadgemi, Fremont, CA (US);
Georgia Tech Research Corporation, Atlanta, GA (US);
Abstract
Disclosed are one-port and two-port microelectromechanical structures including variable capacitors, switches, and filter devices. High aspect-ratio micromachining is used to implement low-voltage, large value tunable and fixed capacitors, and the like. Tunable capacitors can move in the plane of the substrate by the application of DC voltages and achieve greater than 240 percent of tuning. Exemplary microelectromechanical apparatus comprises a single crystalline silicon substrate, and a conductive structure laterally separated from the single crystalline silicon substrate by first and second high aspect ratio gaps of different size, wherein at least one of the high aspect ratio gaps has an aspect ratio of at least 30:1, and is vertically anchored to the single crystalline silicon substrate by way of silicon nitride.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile