The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Dec. 28, 2006
Jae Chang Jung, Seoul, KR;
Jae Chang Jung, Seoul, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method for manufacturing a fine pattern of a semiconductor device comprising: forming hard mask patterns having a thickness of tover an underlying layer; forming a light penetrable thin film having a thickness of tover the hard mask pattern; forming a light absorbable thin film over light penetrable thin film; performing an exposure process on the resulting structure without use of an exposure mask while controlling an amount of exposure energy such that an exposure light reaches a depth T measured from a top surface of the light penetrable thin film to a top surface of the underlying layer such that t<T≦t+t; performing a developing process on the resulting structure to form an organic mask pattern between the hard mask patterns; and etching the underlying layer using the hard mask pattern and the organic mask pattern as an etching mask to form an underlying layer pattern.