The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Oct. 25, 2006
Xijun LI, Tsurugashima, JP;
Kazuya Terabe, Tsukuba, JP;
Kenji Kitamura, Tsukuba, JP;
Hideki Hatano, Tsukuba, JP;
Xijun Li, Tsurugashima, JP;
Kazuya Terabe, Tsukuba, JP;
Kenji Kitamura, Tsukuba, JP;
Hideki Hatano, Tsukuba, JP;
National Institute for Materials Science, Tsukuba-Shi, Ibaraki, JP;
Abstract
Provided are a method and an apparatus for forming a nanometer-order polarization-reversed region in a ferroelectric single crystal, and a device using the ferroelectric single crystal. The method according to the present invention for forming a polarization-reversed region in a ferroelectric single crystal includes the steps of grounding a first surface of the ferroelectric single crystal, and irradiating a second surface of the ferroelectric single crystal opposite to the first surface with an ion beam. The ion beam is irradiated such that the charge density Q (μC/cm) accumulated on the second surface irradiated with the ion beam satisfies the following relationship:0.7×where Ps is the spontaneous polarization (μC/cm) of the ferroelectric single crystal.