The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2011

Filed:

Aug. 02, 2008
Applicants:

Nasser N. Peyghambarian, Tucson, AZ (US);

Robert A. Norwood, Tucson, AZ (US);

Pierre-alexandre Jean Blanche, Tucson, AZ (US);

Savas Tay, Stanford, CA (US);

Inventors:

Nasser N. Peyghambarian, Tucson, AZ (US);

Robert A. Norwood, Tucson, AZ (US);

Pierre-Alexandre Jean Blanche, Tucson, AZ (US);

Savas Tay, Stanford, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03H 1/18 (2006.01); G03H 1/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

An updateable system and method of recording a hologram on a media simultaneously reduces the writing time and increases persistence without sacrificing diffraction efficiency. A voltage kick-off technique controls the bias electric field applied to a photorefractive polymer media in conjunction with the application of the writing beams and dark decay. Essentially the voltage kick-off technique applies a high electric field above the optimal field while the writing beams are on and reduces the electric field when the writing beams are off during dark decay. The voltage kick-off technique produced two separate unexpected results. First, when the writing beams are turned off and the electric field is lowered the diffraction efficiency continues to increase until it reaches a maximum efficiency that is within a few percent of that achieved by writing at the optimal field until steady-state is achieved. Second, the decay time constant is much larger than expected producing a much longer persistence without sacrificing diffraction efficiency or writing time.


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