The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2011

Filed:

Dec. 09, 2008
Applicant:

Eun-soo Jeong, Eumseong-gun, KR;

Inventor:

Eun-Soo Jeong, Eumseong-gun, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments relate to a semiconductor device and a method for fabricating the same. According to embodiments, a semiconductor device may include a metal film spaced from a semiconductor substrate at a predetermined interval and in which a plurality of etching holes are formed. A bottom metal pattern disposed on and/or over a space between the semiconductor substrate and metal film and top metal pattern formed on and/or over the bottom metal pattern may be provided. A pillar may be formed on and/or over the semiconductor substrate and may support one side of a low surface of the bottom metal pattern. A pad may be formed on and/or over the semiconductor substrate, and an air layer corresponding to the bottom metal pattern may be inserted therein. According to embodiments, a pyro-electric switch transistor using a bi-metal with different coefficients of thermal expansion may be provided.


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