The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Apr. 02, 2007
Franz Dietz, Untereisesheim, DE;
Volker Dudek, Brackenheim, DE;
Thomas Hoffmann, Filderstadt, DE;
Michael Graf, Leutenbach, DE;
Stefan Schwantes, Heilbronn, DE;
Franz Dietz, Untereisesheim, DE;
Volker Dudek, Brackenheim, DE;
Thomas Hoffmann, Filderstadt, DE;
Michael Graf, Leutenbach, DE;
Stefan Schwantes, Heilbronn, DE;
Telefunken Semiconductors GmbH & Co. KG, Heilbronn, DE;
Abstract
A lateral DMOS-transistor is provided that includes a MOS-diode made of a semi-conductor material of a first type of conductivity, a source-area of a second type of conductivity and a drain-area of a second type of conductivity which is separated from the MOS-diode by a drift region made of a semi-conductor material of a second type of conductivity which is at least partially covered by a dielectric gate layer which also covers the semi-conductor material of the MOS-diode. The dielectric gate-layer comprises a first region of a first thickness and a second region of a second thickness. The first region covers the semi-conductor material of the MOS-diode and the second region is arranged on the drift region. A transition takes place from the first thickness to the second thickness such that an edge area of the drift region which is oriented towards the MOS-diode is arranged below the second area of the gate layer. The invention also relates to a method for the production of these types of DMOS-transistors.