The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7973301 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 05, 2011

Filed:

May. 20, 2005
Applicants:

Thomas Happ, Pleasantville, NY (US);

Shoaib Hasan Zaidi, Poughkeepsie, NY (US);

Jan Boris Philipp, Peekskill, NY (US);

Inventors:

Thomas Happ, Pleasantville, NY (US);

Shoaib Hasan Zaidi, Poughkeepsie, NY (US);

Jan Boris Philipp, Peekskill, NY (US);

Assignee:

Qimonda AG, Munich, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 29/02 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory cell includes a first electrode, a second electrode, and phase-change material including a first portion contacting the first electrode, a second portion contacting the second electrode, and a third portion between the first portion and the second portion. A width of the third portion is less than a width of the first portion and a width of the second portion.


Find Patent Forward Citations

Happ, Thomas. (2011). Low power phase change memory cell with large read signal (U.S. Patent No. 7973301). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7973301

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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