The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Oct. 28, 2010
Chan Sun Hyun, Icheon-Si, KR;
Chan Sun Hyun, Icheon-Si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method of forming patterns of a semiconductor device comprising forming an auxiliary layer over an underlying layer comprising a cell region and a select transistor region, forming a first passivation layer over the auxiliary layer, wherein the first passivation layer blocks the auxiliary layer of the select transistor region and opens the auxiliary layer of the cell region, and forming a first photoresist pattern having a narrower width than the first passivation layer over (a) the first passivation layer and (b) second photoresist patterns, each having a narrower width than the first photoresist pattern, over an opening region of the auxiliary layer, wherein a gap between the first and second photoresist patterns is identical in width with a gap defined between the second photoresist patterns.