The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Apr. 27, 2009
Jung-hoon Lee, Suwon-si, KR;
Hong-jae Shin, Seoul, KR;
Seo-woo Nam, Yongin-si, KR;
Sae-il Son, Suwon-si, KR;
Sang-doo Kim, Seoul, KR;
Jung-deog Lee, Yongin-si, JP;
Sang-wook Kwon, Suwon-si, KR;
Jung-hoon Lee, Suwon-si, KR;
Hong-jae Shin, Seoul, KR;
Seo-woo Nam, Yongin-si, KR;
Sae-il Son, Suwon-si, KR;
Sang-doo Kim, Seoul, KR;
Jung-deog Lee, Yongin-si, JP;
Sang-wook Kwon, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a method of fabricating a semiconductor device including a dual silicide process. The method may include sequentially siliciding and stressing a first MOS region, and sequentially siliciding and stressing a second MOS region after siliciding and stressing the first MOS region, the second MOS region being a different type than the first MOS region.