The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Nov. 09, 2009
Applicants:
Tomomi Kusaka, Kanagawa-ken, JP;
Takahisa Kanemura, Kanagawa-ken, JP;
Inventors:
Tomomi Kusaka, Kanagawa-ken, JP;
Takahisa Kanemura, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/42 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process simulation method includes: converting condition data of plasma doping for introducing an impurity into a semiconductor in a plasma atmosphere to corresponding condition data of ion implantation for implanting impurities as an ion beam into the semiconductor; and calculating device structure data on the basis of the ion implantation condition data converted from the plasma doping condition data.
Kusaka, Tomomi. (2011). Process simulation method, semiconductor device manufacturing method, and process simulator (U.S. Patent No. 7972944). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7972944
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile