The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Jun. 05, 2009
Applicants:
Rabi S. Bhattacharya, Dayton, OH (US);
Yongli Xu, Centerville, OH (US);
Inventors:
Rabi S. Bhattacharya, Dayton, OH (US);
Yongli Xu, Centerville, OH (US);
Assignee:
UES, Inc., Dayton, OH (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/46 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of producing CdZnTe (CZT) layers for the epitaxial growth of HgCdTe thereon include implanting ions into a CZT substrate at a low temperature to form a damaged layer underneath a CZT surface layer, bonding a wafer to the CZT substrate about the CZT surface layer using a bonding material, and, annealing the CZT substrate for a time sufficient to facilitate the splitting of the CZT substrate at the damaged layer from the CZT surface layer.