The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Jun. 02, 2006
Yukihiro Hisanaga, Toyota, JP;
Yukihiro Hisanaga, Toyota, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Abstract
This invention has a purpose to provide an insulated gate-type semiconductor device and its manufacturing method in which a decrease in gate insulation dielectric strength voltage and a reduction in manufacturing costs are both achieved. First, (a) a CZ bulk substrate is prepared. Next, (b) Pdiffused layer and Ndiffused layerare formed by executing processes such as ion implantation and thermal diffusion treatment. Further (c) a gate trench is formed by reactive ion etching. Next, (d) a gate insulation film containing carbon of 1.0×10atoms/cmis formed on the wall face of a gate trench according to a CVD method and, annealing is subsequently performed. As a consequence, a low defect area is formed in the vicinity of an interface between the CZ bulk substrate and the gate insulation film.