The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Nov. 29, 2006
Jung-hyun Park, Seoul, KR;
Jung-geun Jee, Seoul, KR;
Hyoeng-ki Kim, Suwon-si, KR;
Yong-woo Hyung, Yongin-si, KR;
Won-jun Jang, Seoul, KR;
Jung-Hyun Park, Seoul, KR;
Jung-Geun Jee, Seoul, KR;
Hyoeng-Ki Kim, Suwon-si, KR;
Yong-Woo Hyung, Yongin-si, KR;
Won-Jun Jang, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device may include a tunnel insulating layer disposed on an active region of a substrate, field insulating patterns disposed in surface portions of the substrate to define the active region, each of the field insulating patterns having an upper recess formed at an upper surface portion thereof, a stacked structure disposed on the tunnel insulating layer, and impurity diffusion regions disposed at surface portions of the active region adjacent to the stacked structure.