The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Nov. 21, 2008
Hunter J. Martinez, Austin, TX (US);
John J. Hackenberg, Austin, TX (US);
Jill Hildreth, Austin, TX (US);
Ross E. Noble, Austin, TX (US);
Hunter J. Martinez, Austin, TX (US);
John J. Hackenberg, Austin, TX (US);
Jill Hildreth, Austin, TX (US);
Ross E. Noble, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method of forming a semiconductor layer, which in one embodiment is part of a photodetector, includes forming a silicon shape, applying ozonated water, removing the first oxide layer at a temperature below 600 degrees Celsius, and epitaxially growing germanium. The silicon shape has a top surface that is exposed. The ozonated water is applied to the top surface and causes formation of a first oxide layer on the top surface. The germanium is grown on the top surface.