The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Nov. 29, 2006
Jing Chen, Hong Kong, CN;
Yong Cai, Hong Kong, CN;
Kei May Lau, Hong Kong, CN;
The Hong Kong University of Science and Technology, Kowloon, HK;
Abstract
A method for and devices utilizing monolithic integration of enhancement-mode and depletion-mode AlGaN/GaN heterojunction field-effect transistors (HFETs) is disclosed. Source and drain ohmic contacts of HFETs are first defined. Gate electrodes of the depletion-mode HFETs are then defined. Gate electrodes of the enhancement-mode HFETs are then defined using fluoride-based plasma treatment and high temperature post-gate annealing of the sample. Device isolation is achieved by either mesa etching or fluoride-based plasma treatment. This method provides a complete planar process for GaN-based integrated circuits favored in high-density and high-speed applications.