The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Jan. 13, 2009
Huai-yuan Tseng, Taoyuan County, TW;
Chen-pang Kung, Taoyuan County, TW;
Horng-chih Lin, Hsinchu, TW;
Ming-hsien Lee, Kaohsiung, TW;
Huai-Yuan Tseng, Taoyuan County, TW;
Chen-Pang Kung, Taoyuan County, TW;
Horng-Chih Lin, Hsinchu, TW;
Ming-Hsien Lee, Kaohsiung, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method of fabricating a semiconductor device includes first providing an insulation substrate. A patterned conductive layer is formed over the insulation substrate, and the patterned conductive layer includes a channel region and a number of protruding regions. A gate structure layer is formed over the insulation substrate. The gate structure layer covers a part of the patterned conductive layer, and each of the protruding regions has an exposed region. A doping process is performed to dope at least the exposed region of the patterned conductive layer to form a number of S/D regions.